Improvement of GaN-based laser diode facets by FIB polishing

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Improvement of GaN-based laser diode facets by FIB polishing

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420 nm metal organic chemical vapour deposition-grown laser diodes were fabricated using Cl2 reactive ion etching to form the facet mirrors. The diodes were subsequently tested under pulsed conditions before and after focused ion beam (FIB) polishing. Ith was reduced from 1.75 to 1.08 A and the differential quantum efficiency (ηd) increased from 1.3% to 2.5% after FIB.

Inspec keywords: III-V semiconductors; optical testing; optical fabrication; polishing; sputter etching; laser transitions; semiconductor growth; semiconductor device testing; vapour phase epitaxial growth; laser mirrors; gallium compounds; semiconductor lasers

Other keywords: pulsed conditions; 1.3 to 2.5 percent; 420 nm; Cl2 reactive ion etching; GaN; Cl2; facet mirrors; 1.75 to 1.08 A; metal organic chemical vapour deposition-grown laser diodes; FIB polishing; GaN-based laser diode facets; differential quantum efficiency; focused ion beam polishing

Subjects: Performance and testing of optical systems; Semiconductor lasers; Surface treatment (semiconductor technology); Optical coatings; Surface treatment and degradation in semiconductor technology; Design of specific laser systems; Optical coatings and filters; Chemical vapour deposition; Optical fabrication, surface grinding; Lasing action in semiconductors; Epitaxial growth

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