1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm

Access Full Text

1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A fully integrated single-beam optical receiver is realised in a production 0.35 µm CMOS process, which operates at 850 nm to 1 Gbit/s. The receiver integrates a photodiode, preamplifier, digital logic, and an off-chip driver. Pre-amplifier dissipation is < 1.5 mW at 2.3 V, with an average optical power of –6.3 dBm required for 1 Gbit/s operation. Such a compact optical receiver may be of interest for short distance optical interconnects or local area networks.

Inspec keywords: photodiodes; CMOS integrated circuits; integrated optoelectronics; mixed analogue-digital integrated circuits; optical receivers; photodetectors; digital communication

Other keywords: integrated detector; photodiode; 0.35 micron; local area networks; 1 Gbit/s; short distance optical interconnects; 850 nm; LAN application; 2.3 V; OEIC; single-beam optical receiver; 1.5 mW; preamplifier; CMOS photoreceiver; digital logic

Subjects: Photoelectric devices; Optical communication; Mixed analogue-digital circuits; CMOS integrated circuits; Integrated optoelectronics

References

    1. 1)
      • D.M. Kuchta , H.A. Ainspan , F.J. Canora , R.P. Scheider . Performance of fiber-opticdata links using 670-nm cw VCSELS and a monolithic Si photodetector and CMOSpreamplifier. IBM J. Res. Dev. , 12 , 63 - 72
    2. 2)
      • Lalanne, P., Rodier, J.-C.: `CMOS photodiodes based on vertical p-n-p junctions', Workshop on Optics and Computer Science, Proc. 11th Int.Parallel Processing Symp., 1–5 April 1997, Geneva, Switzerland.
    3. 3)
      • T.K. Woodward , A.V. Krishnamoorthy , A.L. Lentine , L.M.F. Chirovsky . Optical receivers for optoelectronic VLSI. IEEE J. Sel. Top.Quantum Electron. , 106 - 116
    4. 4)
      • G. Williams , Li . (1991) Lightwave receivers, Topics in lightwave systems.
    5. 5)
      • G. Yayla , A.V. Krishnamoorthy , G.C. Marsden , S.C. Esener . A prototype 3D opticallyinterconnected neural network. Proc. IEEE , 1749 - 1762
    6. 6)
      • N.H.E. West , K. Eshraghian . (1993) Principles of CMOS VLSI design.
    7. 7)
      • H.H. Kim , R.G. Swartz , Y. Ota , T.K. Woodward , M.D. Feuer , W.L. Wilson . Prospects for silicon monolithic opto-electronics with polymer light-emittingdiodes. J. Lightwave Technol. , 12 , 2114 - 2121
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980855
Loading

Related content

content/journals/10.1049/el_19980855
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading