Experimental evidence of nonuniform carrier distribution in multiple-quantum-well laser diodes

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Experimental evidence of nonuniform carrier distribution in multiple-quantum-well laser diodes

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Published

Carrier distribution in multiple quantum wells is studied. Nonuniform carrier distribution is evidenced by the lasing characteristics of laser diodes with multiple quantum wells of different widths. It is shown that the well sequence significantly influences the threshold current and the characteristic temperature owing to nonuniform carrier distribution.

Inspec keywords: quantum well lasers

Other keywords: nonuniform carrier distribution; multiple-quantum-well laser diode; characteristic temperature; threshold current

Subjects: Lasing action in semiconductors; Semiconductor lasers

References

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      • H. Yamazaki , A. Tomita , M. Yamaguchi . Evidence of nonuniform carrier distribution in multiple quantum welllasers. Appl. Phys. Lett. , 767 - 769
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