GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique

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GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique

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A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH4)2Sx treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190 mS/mm was obtained for MESFETs with 1.0 µm gate length, fabricated on the layers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication.

Inspec keywords: Schottky gate field effect transistors; surface diffusion; III-V semiconductors; gallium arsenide; semiconductor doping; rapid thermal annealing; sulphur

Other keywords: rapid thermal annealing; 190 mS/mm; GaAs MESFET fabrication; GaAs; GaAs:S; S diffusion technique; 1 micron; transconductance; (NH4)2Sx solution; (NH4)2S; RTA

Subjects: Semiconductor doping; Other field effect devices; Annealing processes in semiconductor technology

References

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    2. 2)
      • J.-L. Lee , D. Kim , S.J. Maeng , H.H. Park , J.Y. Kang , Y.T. Lee . Improvement of breakdown characteristics of GaAs power FET using (NH4)2Sxtreatment. J. Appl. Phys. , 3539 - 3542
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      • J.-L. Lee , J.K. Mun , H. Kim , H.G. Lee , K.-E. Pyun , H.M. Park . High-lowdoped power MESFET with 32.0 dBm output power for 3.0 Vdigital/analogue dual-mode hand-held telephone. Electron. Lett. , 1390 - 1391
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      • H. Matino . Reproducible sulphur diffusion into GaAs. Solid State Electron. , 35 - 39
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