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GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique

GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique

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A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH4)2Sx treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190 mS/mm was obtained for MESFETs with 1.0 µm gate length, fabricated on the layers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication.

References

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      • H. Matino . Reproducible sulphur diffusion into GaAs. Solid State Electron. , 35 - 39
    2. 2)
      • J.-L. Lee , D. Kim , S.J. Maeng , H.H. Park , J.Y. Kang , Y.T. Lee . Improvement of breakdown characteristics of GaAs power FET using (NH4)2Sxtreatment. J. Appl. Phys. , 3539 - 3542
    3. 3)
      • Yokoyama, T., Kunihisa, T., Nishijima, M., Yamamoto, S., Nishitsuji, M., Nishii, K., Nakayama, M., Ishikawa, O.: `Low current dissipation pseudomorphicMODFET MMIC power amplifier for PHS operating with a 3.5 V singlevoltage supply', GaAs IC Symp. Tech. Dig., October 1996, p. 107–110.
    4. 4)
      • J.-L. Lee , J.K. Mun , H. Kim , H.G. Lee , K.-E. Pyun , H.M. Park . High-lowdoped power MESFET with 32.0 dBm output power for 3.0 Vdigital/analogue dual-mode hand-held telephone. Electron. Lett. , 1390 - 1391
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