40 Gbit/s EAM driver IC in SiGe bipolar technology

40 Gbit/s EAM driver IC in SiGe bipolar technology

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An SiGe bipolar IC for directly driving a differential electroabsorption modulator in a 40 Gbit/s fibre optic TDM system is presented. An adjustable modulator bias voltage (0 to –2 V) is generated on-chip by a novel active network in the output stage. Clear eye diagrams at 40 Gbit/s and output swings up to 2.5 Vpp (nominal 2 Vpp) were measured on mounted chips.


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