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40 Gbit/s EAM driver IC in SiGe bipolar technology

40 Gbit/s EAM driver IC in SiGe bipolar technology

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An SiGe bipolar IC for directly driving a differential electroabsorption modulator in a 40 Gbit/s fibre optic TDM system is presented. An adjustable modulator bias voltage (0 to –2 V) is generated on-chip by a novel active network in the output stage. Clear eye diagrams at 40 Gbit/s and output swings up to 2.5 Vpp (nominal 2 Vpp) were measured on mounted chips.

References

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      • Lao, Z.: `High power modulatordriver ICS up to 30 Gb/s with AlGaAs/GaAs HEMTs', GaAs IC Symp. Tech. Dig., 1997, p. 223–226.
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      • H.-M. Rein , M. Möller . Design considerations for very-high-speed Si-bipolar ICs operating upto to 50 Gb/s. IEEE J. Solid-State Circuits , 8 , 1076 - 1090
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      • Meister, T.F.: `SiGe base bipolar technology with 74 GHz f', Tech. Dig. IEDM '95, December 1995, Washington, p. 739–742.
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