http://iet.metastore.ingenta.com
1887

8.8 W CW power from broad-waveguide Al-free active-region (λ = 805 nm) diode lasers

8.8 W CW power from broad-waveguide Al-free active-region (λ = 805 nm) diode lasers

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Al-free active-region (λ = 805 nm) diode lasers with 1 µm thick InGaP waveguide layers provide continuous wave powers as high as 8.8 W from 1.25 mm long devices with 4%/95% facet-coating reflectivities and 100 µm wide stripes. The transverse beam pattern is Gaussian-like with a 36° beamwidth and the series resistance is only 48 mΩ.

References

    1. 1)
      • K. Shigihara , Y. Nagai , S. Karadida , A. Takami , Y. Kokubo , H. Matsubara , S. Kakimoto . High-power operation of broad-area laser diodes with GaAs and AlGaAssingle quantum wells for Nd:YAG laser pumping. IEEE J. Quantum Electron. , 6 , 1537 - 1543
    2. 2)
      • S.L. Yellen , A.H. Shepard , R.J. Dalby , J.A. Baumann , H.B. Serreze , T.S. Guido , R. Soltz , K.J. Bystrom , C.M. Harding , R.G. Waters . Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 µm. IEEE J. Quantum Electron. , 6 , 2058 - 2067
    3. 3)
      • Garbuzov, D.Z., Abeles, J.H., Morris, N.A., Gardner, P.D., Triano, A.R., Harvey, M.G., Gilbert, D.B., Connolly, J.C.: `High power separate confinement heterostructure AlGaAs/GaAs laser diodeswith broadened waveguide', Proc. SPIE, 1996, 2682, p. 20–26.
    4. 4)
      • S.L. Yellen , A.H. Shepard , C.M. Harding , J.A. Baumann , R.G. Waters , D.Z. Garbuzov , V. Pjataev , V. Kochergin , P.S. Zory . Dark-line-resistant, Aluminum-free diode laser at 0.8 µm. IEEE Photonics Technol. Lett. , 12 , 1328 - 1330
    5. 5)
      • J.K. Wade , L.J. Mawst , D. Botez , R.F. Nabiev , M. Jansen , J.A. Morris . 6.1W continuous wave front-facet power from Al-free active-region (λ= 805 nm) diode lasers. Appl. Phys. Lett. , 1 , 4 - 6
    6. 6)
      • D.Z. Garbuzov , N.Y. Antonishkis , A.D. Bondarev , A.B. Gulakov , S.N. Zhigulin , N.I. Katsavets , A.V. Kochergin , E.V. Rafailov . High-power 0.8 µm InGaAsP-GaAs SCH SQW lasers. IEEE J. Quantum. Electron. , 6 , 1531 - 1536
    7. 7)
      • W.E. Plano , J.S. Major , D.F. Welch . High power 875 nm Al-free laser diodes. IEEE Photonics Technol. Lett. , 4 , 465 - 467
    8. 8)
      • Daiminger, F., Heinemann, S., Näppi, J., Toivonen, M., Asonen, H.: `100W cwAl-free 808nm linear bar arrays', CLEO, 1997 OSA Tech. Dig. Series, 1997, 11, p. 482–483.
    9. 9)
      • L.J. Mawst , A. Bhattacharya , J. Lopez , D. Botez , D.Z. Garbuzov , L. DeMarco , J.C. Connolly , M. Jansen , F. Fang , R.F. Nabiev . 8 W continuous wave front-facet power from broad-waveguide Al-free 980nm diode lasers. Appl. Phys. Lett. , 11 , 1532 - 1534
    10. 10)
      • Al-Muhanna, A., Mawst, L.J., Botez, D., Garbuzov, D.Z., Martinella, R.U., Connolly, J.C.: `10.6 W CW front-facet power from 100 µm-aperature 0.97 µm-emittingAl-free diode lasers', CMD3, CLEO, 1998 OSA Tech. Dig. Series, 1998.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980775
Loading

Related content

content/journals/10.1049/el_19980775
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address