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Record quantum efficiency (92%) operation of 680 nm GaInP/AlGaInP ridge waveguide singlemode lasers

Record quantum efficiency (92%) operation of 680 nm GaInP/AlGaInP ridge waveguide singlemode lasers

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The record quantum efficiency operation of 680 nm GaInP/AlGaInP singlemode lasers is reported. A low threshold current of 40 mA and a very high quantum efficiency of 46% per facet were measured for a 5 × 500 µm2 as-cleaved ridge waveguide laser. For the AR/HR coated devices a quantum efficiency as high as 92% was achieved.

Inspec keywords: waveguide lasers; aluminium compounds; laser modes; gallium compounds; ridge waveguides; indium compounds; semiconductor lasers

Other keywords: ridge waveguide singlemode lasers; 92 percent; threshold current; AR/HR coated devices; per facet efficiency; 680 nm; quantum efficiency; GaInP-AlGaInP; 40 mA

Subjects: Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems

References

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      • J. Kuhn , C. Geng , F. Scholz , H. Schweizer . Low-threshold GaInP/AlGaInP ridge waveguide lasers. Electron. Lett. , 20 , 1707 - 1708
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      • D.P. Bour , R.S. Geels , D.W. Treat , T.L. Paoli , F. Ponce , R.L. Thornton , B.S. Krusor , R.D. Bringans , D.F. Welch . Strained GaxIn1-xP/(AlGa)0.5In0.5Pheterostructures and quantum-well laser diodes. IEEE J. Quantum Electron. , 2 , 593 - 607
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980761
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