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Record quantum efficiency (92%) operation of 680 nm GaInP/AlGaInP ridge waveguide singlemode lasers

Record quantum efficiency (92%) operation of 680 nm GaInP/AlGaInP ridge waveguide singlemode lasers

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The record quantum efficiency operation of 680 nm GaInP/AlGaInP singlemode lasers is reported. A low threshold current of 40 mA and a very high quantum efficiency of 46% per facet were measured for a 5 × 500 µm2 as-cleaved ridge waveguide laser. For the AR/HR coated devices a quantum efficiency as high as 92% was achieved.

References

    1. 1)
      • D.P. Bour , R.S. Geels , D.W. Treat , T.L. Paoli , F. Ponce , R.L. Thornton , B.S. Krusor , R.D. Bringans , D.F. Welch . Strained GaxIn1-xP/(AlGa)0.5In0.5Pheterostructures and quantum-well laser diodes. IEEE J. Quantum Electron. , 2 , 593 - 607
    2. 2)
      • M. Toivonen , P. Savolainen , M. Pessa . High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy. Semicond. Sci. Technol. , 1923 - 1926
    3. 3)
      • M. Pessa , M. Toivonen , M. Jalonen , P. Savolainen , A. Salokatve . All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors. Thin Solid Films , 237 - 243
    4. 4)
      • I. Kidoguchi , S. Kamiyama , M. Mannoh , Y. Ban , K. Ohnaka . Extremely high quantum efficiency (86%) operation of AlGaInP visiblelaser diode with lateral leaky waveguide structure. Appl. Phys. Lett. , 21 , 2602 - 2604
    5. 5)
      • J. Kuhn , C. Geng , F. Scholz , H. Schweizer . Low-threshold GaInP/AlGaInP ridge waveguide lasers. Electron. Lett. , 20 , 1707 - 1708
    6. 6)
      • D. Sun , D.W. Treat , D.P. Bour . High performance 660 nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode. Electron. Lett. , 16 , 1488 - 1490
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