Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode

Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode

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The room-temperature pulsed operation of a five GaInN multiple-quantum-well (MQW) laser diode (LD) is reported. The lowest threshold current density was 9.5 kA/cm2. The highest external differential quantum efficiency was 49% for a 1 mm long cavity. The laser wavelength was 417.5 nm with a full width at half maximum (FWHM) of less than the spectrum resolution of 0.2 nm. The characteristic temperature was 185 K. Pulsed operation of the LD up to 80°C was demonstrated. Laser operation was confirmed with a duty cycle up to 10%.


    1. 1)
      • S. Nakamura , M. Senoh , S. Nagahama , N. Iwasa , T. Yamada , T. Matsushita , H. Kiyoku , Y. Sugimoto , T. Kozaki , H. Umemoto , M. Sano , K. Chocho . InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layersuperlattices. Jpn. J. Appl. Phys. 2 Lett. , L1568 - L1571
    2. 2)
      • S. Nakamura . Characteristics of room temperature-CW operated InGaN multi-quantum-well-structure laser diodes. MRS Internet J. Nitride Semicond. Res. , 5

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