Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

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Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

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The effective barrier heights of Schottky diodes on hydrogenated amorphous silicon have been varied over a wide range using ion implantation of the common dopants. For small changes in barrier height, damage effects are negligible and dopant activity is high, leading to minimal changes in ideality factors and leakage currents.

Inspec keywords: elemental semiconductors; amorphous semiconductors; Schottky diodes; ion implantation; silicon

Other keywords: dopant activity; ideality factor; Si:H; leakage current; Schottky diode; damage; ion implantation; barrier height; hydrogenated amorphous silicon

Subjects: Semiconductor doping; Junction and barrier diodes

References

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