Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The effective barrier heights of Schottky diodes on hydrogenated amorphous silicon have been varied over a wide range using ion implantation of the common dopants. For small changes in barrier height, damage effects are negligible and dopant activity is high, leading to minimal changes in ideality factors and leakage currents.

References

    1. 1)
      • K.J.B.M. Nieuwesteeg , M. van der Veen , T.J. Vink , J.M. Shannon . On the current mechanism in reverse-biased amorphous silicon Schottky contacts. II. Reverse-bias current mechanisms. J. Appl. Phys. , 2581 - 2589
    2. 2)
      • H. Mannsperger , S. Kalbitzer , G. Müller . Doping efficiencies of gas-phase and ion-implantation doped a-Si:H. Appl. Phys. A , 253 - 258
    3. 3)
      • S. Kalbitzer , G. Müller , P.G. Le Comber , W.E. Spear . The effects of ion implantation on the electrical properties of amorphous silicon. Philos. Mag. B , 4 , 439 - 456
    4. 4)
      • S.M. Sze . (1981) Physics of semiconductor devices.
    5. 5)
      • R.A. Street . (1991) Hydrogenated amorphous silicon.
    6. 6)
      • R.A.C.M.M. Van Swaaij , A.D. Annis , B.J. Sealy , J.M. Shannon . Electronic effects of ion damage in hydrogenated amorphous silicon alloys. J. Appl. Phys. , 4800 - 4804
    7. 7)
      • J.M. Shannon , K.J.B.M. Nieuwesteeg . Tunnelling effective mass in hydrogenated amorphous silicon. Appl. Phys. Lett. , 1815 - 1817
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980641
Loading

Related content

content/journals/10.1049/el_19980641
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address