Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

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The effective barrier heights of Schottky diodes on hydrogenated amorphous silicon have been varied over a wide range using ion implantation of the common dopants. For small changes in barrier height, damage effects are negligible and dopant activity is high, leading to minimal changes in ideality factors and leakage currents.


    1. 1)
      • S.M. Sze . (1981) Physics of semiconductor devices.
    2. 2)
      • H. Mannsperger , S. Kalbitzer , G. Müller . Doping efficiencies of gas-phase and ion-implantation doped a-Si:H. Appl. Phys. A , 253 - 258
    3. 3)
      • S. Kalbitzer , G. Müller , P.G. Le Comber , W.E. Spear . The effects of ion implantation on the electrical properties of amorphous silicon. Philos. Mag. B , 4 , 439 - 456
    4. 4)
      • R.A. Street . (1991) Hydrogenated amorphous silicon.
    5. 5)
      • R.A.C.M.M. Van Swaaij , A.D. Annis , B.J. Sealy , J.M. Shannon . Electronic effects of ion damage in hydrogenated amorphous silicon alloys. J. Appl. Phys. , 4800 - 4804
    6. 6)
      • K.J.B.M. Nieuwesteeg , M. van der Veen , T.J. Vink , J.M. Shannon . On the current mechanism in reverse-biased amorphous silicon Schottky contacts. II. Reverse-bias current mechanisms. J. Appl. Phys. , 2581 - 2589
    7. 7)
      • J.M. Shannon , K.J.B.M. Nieuwesteeg . Tunnelling effective mass in hydrogenated amorphous silicon. Appl. Phys. Lett. , 1815 - 1817

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