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Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

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The effective barrier heights of Schottky diodes on hydrogenated amorphous silicon have been varied over a wide range using ion implantation of the common dopants. For small changes in barrier height, damage effects are negligible and dopant activity is high, leading to minimal changes in ideality factors and leakage currents.

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