http://iet.metastore.ingenta.com
1887

Electron trapping in SI implanted SIMOX

Electron trapping in SI implanted SIMOX

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The implantation and annealing processes of SIMOX fabrication may result in excess silicon atoms located in the buried oxide. These excess silicon atoms have been postulated by various researchers to be responsible for the formation of silicon clusters and associated defects in SIMOX . This work was performed to test this postulate. These defects result in a higher refractive index , an increase in the number of electron traps, and the production of traps with very large capture cross-sections. It is also known that excess silicon introduced by ion implantation creates electron traps in thermal oxides . This work supports the above postulate by implanting a large range of silicon concentrations into low defect multiple implant SIMOX and measuring the resulting electron traps by the avalanche injection technique.

References

    1. 1)
      • V.V. Afanas'ev , A.G. Revesz , H.L. Hughes . Confinement phenomena in buriedoxides of SIMOX structures as affected by processing. J. Elec. Chem. Soc. , 695 - 700
    2. 2)
      • Bhar, T.N., Lambert, R.J., Hughes, H.L.: `Decrease in electron capture cross-sectionsin SIMOX with supplemental implant', Proc. 1994 IEEE International SOIConf., 1994, p. 115–116.
    3. 3)
      • A.G. Revesz , H.L. Hughes , J.P. Colinge , V.S. Lysenko , A.N. Nazarov . (1994) Physical and technical problems of SOI structuresand devices.
    4. 4)
      • McMarr, P.J., Mrstik, B.J., Twigg, M.E., Hughes, H.L., Anc, M.J., Roitman, P., Garcia, G.A.: `Optimisation of the electrical properties of low-dose SIMOX wafers', GOMAC Digest, 1997.
    5. 5)
      • M. Hao , H. Hwang , J.C. Lee . Memory effects of silicon implanted oxides forelectrically erasable programmable read-only memory applications. Appl. Phys.Lett. , 1530 - 1532
    6. 6)
      • A. Kalnitsky , A.R. Boothroyd , J.P. Ellul , E.H. Poindexter , P.J. Caplan . Electronic states at the Si-SiO2 interface introduced by implantationof Si inthermal SiO2. Solid State Elec. , 523 - 530
    7. 7)
      • P.J. McMarr , B.J. Mrstik , M.S. Barger , G. Bowden , J.R. Blanco . A study of Siimplanted with oxygen using spectroscopic ellipsometry. J. Appl. Phys. , 7211 - 7222
    8. 8)
      • D.R. Young , E.A. Irene , D.J. DiMaria , R.F. DeKeersmaecker , H.Z. Massoud . Electron trapping in SiO2 at 295 and 77°K. J. Appl. Phys. , 6366 - 6372
    9. 9)
      • R.J. Lambert , T.N. Bhar , H.L. Hughes . Effect of an augmented oxygen implanton electron trapping in buried oxides. Appl. Phys. Lett.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980626
Loading

Related content

content/journals/10.1049/el_19980626
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address