High dynamic CMOS preamplifiers for QW diodes
A CMOS transimpedance amplifier was designed as a front end preamplifier for electro-optic quantum well sensors. The circuit layout is optimised, in terms of silicon area, to fully exploit the capability of an AT&T flip-chip technique by which the quantum well sensors are directly bonded to the last metal layer of an integrated circuit. The particular circuit topology achieves a high output swing and good noise behaviour, which allow a 70 dB dynamic range. This amplifier can be provided with peaking and/or offset trimming circuits.
