Dark current optimisation for MOVPE grown 2.5 µm wavelength InGaAs photodetectors
The authors have obtained state-of-the-art dark current densities of typical 10–9 A/cm2 (150 K, –10 mV) for 2% mismatched In0.82Ga0.18As photodetectors, by optimising the n-type doping level of the absorbing layer. It is demonstrated that the dark current can be decomposed into three different contributions. The decreased optical response accompanying higher doping levels, remains acceptable.