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Dark current optimisation for MOVPE grown 2.5 µm wavelength InGaAs photodetectors

Dark current optimisation for MOVPE grown 2.5 µm wavelength InGaAs photodetectors

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The authors have obtained state-of-the-art dark current densities of typical 10–9 A/cm2 (150 K, –10 mV) for 2% mismatched In0.82Ga0.18As photodetectors, by optimising the n-type doping level of the absorbing layer. It is demonstrated that the dark current can be decomposed into three different contributions. The decreased optical response accompanying higher doping levels, remains acceptable.

References

    1. 1)
      • M. D'Hondt , I. Moerman , P. Van Daele , P. Demeester . Influence of bufferlayer and processing on the darkcurrent of 2.5 µm wavelength, 2% mismatched InGaAs photodetectors. IEE Proc. Optoelectron. , 5 , 277 - 282
    2. 2)
      • M. D'Hondt , I. Moerman , P. Demeester . Characterisation of 2% mismatched InGaAs and InAsP layers,grown on different buffer layers and at different growth temperatures. J. Crys. Growth , 616 - 620
    3. 3)
      • D'Hondt, M., Moerman, I., Van Daele, P., Demeester, P.: `Low dark current, mismatched In', Proceedings of the 7th EuropeanWorkshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, 8–11 June 1997, Berlin, Germany, p. H5.
    4. 4)
      • Joshi, A.M., Olsen, G.H., Mason, S., Lange, M.J., Ban, V.S.: `Near-infrared (1-3 µm) InGaAs detectors andarrays', Crystal Growth, Leakage Current and Reliability, 1992, p. 585–593SPIE 1715, .
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