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Micro-buried structure for electrical isolation formed by hydride vapour phase epitaxy

Micro-buried structure for electrical isolation formed by hydride vapour phase epitaxy

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A micro-buried structure for electrical isolation has been successfully realised using hydride vapour phase epitaxy (HVPE). The width of the buried region is ~2 µm and the resistivity between each region is ~1 MΩ when the applied voltage is 2 V. It was also found that the semi-insulating buried heterostructure formed by HVPE is useful for reducing reflection at the isolation region.

Inspec keywords: isolation technology; vapour phase epitaxial growth; semiconductor lasers; buried layers

Other keywords: electrical isolation; reflection; SILC-BLD; resistivity; 2 V; hydride vapour phase epitaxy; micro-buried structure; semi-insulating buried heterostructure

Subjects: Semiconductor lasers; Epitaxial growth

References

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      • Miyazawa, T., Kobayashi, F., Mori, H.: `Regrowth of semi-insulating iron doped InP around cross laser mesas byhydride vapour phase epitaxy', WP54, 7th Int. Conf. IPRM, 1995.
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      • Lourdudoss, S., Streubel, K., Wallion, J., Andre, J., Kjebon, O., Landgren, G.: `Very rapid and selective epitaxy of InP around mesas of height up to14 µm by hydride vapour phase epitaxy', ThF5, 6th Int. Conf. IPRM, 1994.
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