Plasma immersion Ar+ ion implantation induced disorder in strained InGaAsP multiple quantum wells

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Plasma immersion Ar+ ion implantation induced disorder in strained InGaAsP multiple quantum wells

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The authors report the disordering in compressively strained InGaAsP/InP multiple quantum wells induced by 20 keV Ar+ plasma immersion ion implantation. With an Ar+ dose of 1016 cm–2 and a subsequent standard furnace annealing at 650°C for 90 min, the implanted sample exhibits an extra blue-shift of about 20 nm in comparison to the unimplanted control sample. For a sample that has been partially masked during implantation, a sharp intermixing step is observed after the 650°C anneal, indicating that the technique has the potential of introducing a localised disordering effect and, hence, may be a viable fabrication technique for integrated photonic devices.

Inspec keywords: gallium arsenide; semiconductor quantum wells; III-V semiconductors; indium compounds; photoluminescence; annealing; ion implantation

Other keywords: Ar+ plasma immersion ion implantation; furnace annealing; integrated photonic device; compressively strained InGaAsP/InP multiple quantum well; 20 keV; disorder; blue shift; InGaAsP-InP; fabrication; intermixing; Ar; 650 C

Subjects: Low-dimensional structures: growth, structure and nonelectronic properties; Doping and implantation of impurities; II-VI and III-V semiconductors; Luminescent materials; Annealing processes; Photoluminescence in tetrahedrally bonded nonmetals; Semiconductor superlattices, quantum wells and related structures; Semiconductor doping; Optical properties of nonmetallic thin films; Annealing processes in semiconductor technology

References

    1. 1)
      • H. Sumida , H. Asahi , S. Jae Yu , K. Asami , S. Gonda , H. Tanone . Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation. Appl. Phys. Lett. , 520 - 522
    2. 2)
      • X. Lu , S.S.K. Iyer , J.B. Liu , C.M. Hu , N.W. Cheung , J. Min , P.K. Chu . Separation by plasma implantation of oxygen to form silicon on insulator. Appl. Phys. Lett. , 1748 - 1750
    3. 3)
      • B. Tell , J. Shah , P.M. Thomas , K.F. Brown-Goebeler , A. DiGiovanni , B.I. Miller , U. Koren . Phosphorus ion implantation induced intermixing of InGaAs-InP quantumwell structures. Appl. Phys. Lett. , 1570 - 1572
    4. 4)
      • J. Oshinowo , J. Dreybrodt , A. Forchel , N. Mestres , J.M. Calleja , I. Gyuro , P. Speier , E. Zielinski . Photoluminescence study of implantation-induced intermixing of In0.53Ga0.47As/InPsingle quantum wells by argon ions. J. Appl. Phys. , 1983 - 1986
    5. 5)
      • P.K. Phu , S. Qin , C. Chan , N.W. Cheung , L.A. Larson . Plasma immersion ion implantation - A fledgling technique for semiconductorprocessing. Mater. Sci. Eng. Rep. , 207 - 280
    6. 6)
      • B.S. Ooi , K. McIlvaney , M.W. Street , A.S. Helmy , S.G. Ayling , A.C. Bryce , J.H. Marsh , J.S. Roberts . Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-freevacancy diffusion. IEEE J. Quantum Electron. , 1784 - 1793
    7. 7)
      • P.K. Chu , S. Qin , C. Chan , N.W. Cheung , P.K. Ko . Instrumental and process considerations for the fabrication of silicon-on-insulator(SOI) structures by plasma immersion ion implantation. IEEE Trans. Plasma Science
    8. 8)
      • B. Tell , B.C. Johnson , J.L. Zyskind , J.M. Brown , J.W. Sulhoff , K.F. Brown-Goebeler , B.I. Miller , U. Koren . Disording of InGaAs-InP quantum wells by Si implantation. Appl. Phys. Lett. , 1428 - 1430
    9. 9)
      • P.K. Chu , X. Lu , S.S.K. Iyer , N.W. Cheung . A new way to make SOI wafers. Solid State Technol.
    10. 10)
      • J.H. Marsh . Quantum well intermixing. Semicond. Sci. Technol. , 1136 - 1155
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