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Plasma immersion Ar+ ion implantation induced disorder in strained InGaAsP multiple quantum wells

Plasma immersion Ar+ ion implantation induced disorder in strained InGaAsP multiple quantum wells

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The authors report the disordering in compressively strained InGaAsP/InP multiple quantum wells induced by 20 keV Ar+ plasma immersion ion implantation. With an Ar+ dose of 1016 cm–2 and a subsequent standard furnace annealing at 650°C for 90 min, the implanted sample exhibits an extra blue-shift of about 20 nm in comparison to the unimplanted control sample. For a sample that has been partially masked during implantation, a sharp intermixing step is observed after the 650°C anneal, indicating that the technique has the potential of introducing a localised disordering effect and, hence, may be a viable fabrication technique for integrated photonic devices.

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