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Reliable lifetime prediction in deep submicrometre P-channel partially depleted SOI MOSFETs

Reliable lifetime prediction in deep submicrometre P-channel partially depleted SOI MOSFETs

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  • Author(s): S.H. Renn 1 ; J.L. Pelloie 2 ; F. Balestra 1
    • View affiliations
    • Affiliations: 1: Laboratoire de Physique des Composants à Semiconducteurs (UMR-CNRS), ENSERG/INPG, Grenoble cedex 1, France
      2: Laboratoire d'Electronique, de Technologie et d'Instrumentation (LETI), CEA/Grenoble (DMEL-CENG), Grenoble cedex 9, France
  • Source: Volume 34, Issue 6, 19 March 1998, p. 597 – 598
    DOI:  10.1049/el:19980455 , Print ISSN 0013-5194, Online ISSN 1350-911X
© IEE
Published

Two-stage hot-carrier-induced degradations are thoroughly investigated in deep submicrometre partially depleted P-channel SIMOX MOSFETs. A reliable method for lifetime prediction is proposed for a wide gate length range. The saturation level between the power and logarithmic laws, which depends on the various degradation mechanisms, plays an important role in device lifetime prediction.

Inspec keywords: extrapolation; hot carriers; SIMOX; MOSFET; semiconductor device reliability

Other keywords: partially depleted SOI MOSFETs; deep submicrometre P-channel devices; lifetime prediction; SIMOX; saturation level; two-stage hot-carrier-induced degradations; logarithmic laws; power laws; degradation mechanisms; gate length range

Subjects: Reliability; Interpolation and function approximation (numerical analysis); Semiconductor doping; Maintenance and reliability; Metal-insulator-semiconductor structures; Insulated gate field effect transistors; Numerical analysis

References

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      • S.H. Renn , J.L. Pelloie , F. Balestra . A reliable lifetime prediction indeep submicron N-channel SOI MOSFETs. Microelectron.Eng. , 99 - 102
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      • S.H. Renn , J.L. Pelloie , F. Balestra . Hot-carrier effects in deepsubmicron thin film SOI MOSFETs. IEDM Tech. Dig. , 877 - 880
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      • E. Takeda , N. Suzuki . An empirical model for device degradation dueto hot-carrier injection. IEEE Electron Device Lett. , 111 - 113
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      • V.H. Chan , J.E. Chung . Two-stage hot-carrier degradation and itsimpact on submicrometer LDD NMOSFET lifetime prediction. IEEETrans. Electron Devices , 957 - 962
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      • T. Tsuchiya , T. Ohno , Y. Kado , J. Kai . Hot-carrier-injection oxideregion in front and back interfaces in ultra-thin (50 nm), fully depleted,deep-submicron NMOS and PMOSFET's/SIMOX and their hot-carrierimmunity. IEEE Trans. Electron Devices , 2351 - 2356
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      • C. Liang , H. Gaw , P. Cheng . An analytical model for self-limitingbehavior of hot-carrier degradation in 0.25-µm n-MOSFETs. IEEEElectron Device Lett. , 569 - 571
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