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Reliable lifetime prediction in deep submicrometre P-channel partially depleted SOI MOSFETs

Reliable lifetime prediction in deep submicrometre P-channel partially depleted SOI MOSFETs

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Two-stage hot-carrier-induced degradations are thoroughly investigated in deep submicrometre partially depleted P-channel SIMOX MOSFETs. A reliable method for lifetime prediction is proposed for a wide gate length range. The saturation level between the power and logarithmic laws, which depends on the various degradation mechanisms, plays an important role in device lifetime prediction.

References

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