GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells

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GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells

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A GaInP/AlInP tunnel diode has been grown by a gas-source molecular beam epitaxy method. A high conductance of 15 mA/cm2 at 2.7 mV has been achieved. Using closely optimised growth conditions, very high carrier concentrations, both in GaInP and AlInP, have been obtained.

Inspec keywords: tunnel diodes; p-n heterojunctions; chemical beam epitaxial growth; III-V semiconductors; carrier density; aluminium compounds; indium compounds; gallium arsenide; gallium compounds; solar cells

Other keywords: GaInP-GaAs; optimised growth conditions; gas-source MBE; molecular beam epitaxy method; 2.7 mV; GaInP-AlInP; tunnel diode; GaInP-AlInP tunnel junction; GaInP-GaAs tandem solar cells; high carrier concentrations

Subjects: Semiconductor junctions; Solar cells and arrays; Epitaxial growth; Photoelectric conversion; solar cells and arrays; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

References

    1. 1)
      • E.F. Schubert . (1993) Doping in III-V semiconductors.
    2. 2)
      • T. Takamoto , E. Ikeda , H. Kurita , M. Ohmori . Over 30% efficient InGaP/GaAstandem solar cells. Appl. Phys. Lett. , 3 , 381 - 383
    3. 3)
      • Lammasniemi, J., Tappura, K., Jaakkola, R., Kazantsev, A., Rakennus, K., Uusimaa, P., Pessa, M.: `Molecular beam epitaxy grown GaInP top cells and GaAs tunneldiodes for tandem applications', Conf. Rec. 25th IEEE photovoltaic SpecialistsConference, 1996, p. 97–98.
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