AlSb/InAs HEMTs using modulation InAs(Si)-doping

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AlSb/InAs HEMTs using modulation InAs(Si)-doping

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AlSb/InAs HEMTs have been fabricated using Si-doping in a very thin (9 Å) InAs layer located in the upper AlSb barrier. Quantum Hall measurements show that there is no parallel channel. Devices with a 0.5 µm gate length exhibit a drain current density of > 1 A/mm and an fTLg product of 30 GHzµm at VDS = 0.4 V after correction for the gate bonding pad capacitance.

Inspec keywords: indium compounds; high electron mobility transistors; III-V semiconductors; silicon; aluminium compounds; semiconductor doping

Other keywords: modulation doping; quantum Hall measurements; upper AlSb barrier; AlSb-InAs:Si; fabrication; drain current density; thin InAs layer; 0.5 micron; 9 A; HEMTs

Subjects: Semiconductor doping; Other field effect devices

References

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      • Malik, T.A., Chung, S.J., Stradling, R.A., Yuen, W.T., Harris, J.J., Norman, A.G.: `Remote doping of InAs/GaSb quantum wells by means of a second InAs welldoped with silicon', Inst. Phys. Conf. Ser., 1995, p. 229–233no. 144, .
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      • Boos, J.B., Kruppa, W., Park, D., Molnar, B., Bass, R., Goldenberg, M., Bennett, B.R., Mittereder, J.: `Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs', Proc. Eighth Int. Conf. IPRM, 1996, p. 354–357.
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      • J.D. Werking , C.R. Bolognesi , L.-D. Chang , C. Nguyen , E.L. Hu , H. Kroemer . High-transconductance InAs/AlSb heterojunction field-effect transistorswith δ-doped AlSb upper barriers. IEEE Electron. Device Lett. , 3 , 164 - 166
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      • C.R. Bolognesi , E.J. Caine , H. Kroemer . Improved charge control and frequency performance in AlSb/InAs-based heterostructure field-effect transistors. IEEE Electron. Device Lett. , 1 , 16 - 18
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      • Boos, J.B., Kruppa, W., Park, D., Bennett, B.R., Bass, R.: `DC, small-signal, and noise characteristics of 0.1 µm AlSb/InAs HEMTs', Proc. Ninth Int. Conf. IPRM, 1997, p. 193–196.
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