AlSb/InAs HEMTs have been fabricated using Si-doping in a very thin (9 Å) InAs layer located in the upper AlSb barrier. Quantum Hall measurements show that there is no parallel channel. Devices with a 0.5 µm gate length exhibit a drain current density of > 1 A/mm and an fTLg product of 30 GHzµm at VDS = 0.4 V after correction for the gate bonding pad capacitance.
References
-
-
1)
-
B.R. Bennett ,
M.J. Yang ,
B.V. Shanabrook ,
J.B. Boos ,
D. Park
.
Modulation InAs(Si) doping of InAs/AlSb quantum wells.
Appl. Phys. Lett.
-
2)
-
Malik, T.A., Chung, S.J., Stradling, R.A., Yuen, W.T., Harris, J.J., Norman, A.G.: `Remote doping of InAs/GaSb quantum wells by means of a second InAs welldoped with silicon', Inst. Phys. Conf. Ser., 1995, p. 229–233no. 144, .
-
3)
-
S. Sasa ,
Y. Yamamoto ,
S. Izumiya ,
M. Yano ,
Y. Iwai ,
M. Inoue
.
Increased electron concentration in InAs/AlGaSb heterostructures using a Si planar doped ultrathin InAs quantum well.
Jpn. J. Appl. Phys.
,
1869 -
1871
-
4)
-
Boos, J.B., Kruppa, W., Park, D., Molnar, B., Bass, R., Goldenberg, M., Bennett, B.R., Mittereder, J.: `Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs', Proc. Eighth Int. Conf. IPRM, 1996, p. 354–357.
-
5)
-
J.D. Werking ,
C.R. Bolognesi ,
L.-D. Chang ,
C. Nguyen ,
E.L. Hu ,
H. Kroemer
.
High-transconductance InAs/AlSb heterojunction field-effect transistorswith δ-doped AlSb upper barriers.
IEEE Electron. Device Lett.
,
3 ,
164 -
166
-
6)
-
C.R. Bolognesi ,
E.J. Caine ,
H. Kroemer
.
Improved charge control and frequency performance in AlSb/InAs-based heterostructure field-effect transistors.
IEEE Electron. Device Lett.
,
1 ,
16 -
18
-
7)
-
Boos, J.B., Kruppa, W., Park, D., Bennett, B.R., Bass, R.: `DC, small-signal, and noise characteristics of 0.1 µm AlSb/InAs HEMTs', Proc. Ninth Int. Conf. IPRM, 1997, p. 193–196.
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