Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Ultra-fast optoelectronic circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

Ultra-fast optoelectronic circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

An ultra-fast optoelectronic circuit, using resonant tunnelling diodes (RTDs) and a uni-travelling-carrier photodiode (UTC-PD) is proposed. At extremely low power consumption, the circuit can demulitiplex an ultra-fast optical data signal into an electrical data signal with a lower bit rate. The monolithically fabricated circuit demultiplexed an 80 Gbit/s optical signal into a 40 Gbit/s electrical signal at 7.75 mW.

References

    1. 1)
      • Miyamoto, Y., Yoneyama, M., Hagimoto, K., Ishibashi, T., Shimizu, N.: `Ultra high speed optical receiver with uni-traveling-carrier photodiodeacting as a logic ICdriver', CLEO/Pacific Rim '97 PD2.11, 1997.
    2. 2)
      • Shimizu, N., Watanabe, N., Furuta, T., Ishibashi, T.: `Improved response of uni-traveling-carrierphotodiodes by carrier Injection', Tech. Dig. of SSDM 1997, 1997, p. 184–185.
    3. 3)
      • T. Otsuji , M. Yaita , T. Nagatsuma , E. Sano . 10-80-Gb/s Highly extinctiveelectrooptic pulse pattern generation. IEEE J. Sel. Topics Quantum Electron. , 3 , 643 - 649
    4. 4)
      • K. Maezawa , H. Matsuzaki , M. Yamamoto , T. Otsuji . High-speed and lowpower operation of resonant tunneling logic gate MOBILE. submitted to IEEE Electron. Device Lett.
    5. 5)
      • N. Shimizu , T. Nagatsuma , T. Waho , M. Shinagawa , M. Yaita , M. Yamamoto . A new method for characterising ultrafast resonant-tunnelling diodeswith electro-opticsampling. Opt. Quantum Electron. , 897 - 905
    6. 6)
      • K.J. Chen , K. Maezawa , M. Yamamoto . InP-based high-performancemonostable-bistable transition logic elements (MOBILE's) usingintegrated multiple-input resonant-tunneling devices. IEEE Electron Device Lett. , 3 , 127 - 129
    7. 7)
      • T. Nagatsuma . Measurement of high-speed devices and integrated circuitsusing electro-optic sampling technique. IEICE Trans. Electron. , 1 , 55 - 63
    8. 8)
      • K. Maezawa , T. Mizutani . A new resonant tunneling logic gate employingmonostable-bistable transition. Jpn. J. Appl. Phys. , L42 - L44
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980202
Loading

Related content

content/journals/10.1049/el_19980202
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address