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High performance GaN/AlGaN MODFETs grown by RF-assisted MBE

High performance GaN/AlGaN MODFETs grown by RF-assisted MBE

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High performance 0.25 µm gate-length GaN/AlGaN modulation doped field effect transistors grown by RF-assisted MBE on sapphire are demonstrated. A maximum drain current of 750 mA/mm, and a breakdown voltage exceeding 45 V were obtained. Small signal measurement yielded a current gain cutoff frequency of 28 GHz, and a maximum oscillation frequency of 426 Hz. The authors have achieved < 5% variation in the maximum drain current across 2 in wafers. These results demonstrated the excellent potential of RF-assisted MBE in the growth of GaN-based microwave power devices for practical applications.

Inspec keywords: aluminium compounds; electric breakdown; power HEMT; microwave field effect transistors; III-V semiconductors; molecular beam epitaxial growth; gallium compounds; microwave power transistors

Other keywords: modulation doped FET; RF-assisted MBE; field effect transistors; 45 V; 0.25 micron; GaN-AlGaN; Al2O3; GaN/AlGaN MODFETs; 28 GHz; sapphire substrate; breakdown voltage; microwave power devices; 40 GHz

Subjects: Solid-state microwave circuits and devices; Other field effect devices; Epitaxial growth

References

    1. 1)
      • Y.F. Wu , B. Keller , S. Keller , P. Fini , U. Mishra , M. Le , N.X. Nguyen , C. Nguyen , D. Widman , S. Keller , U. Mishra . Short-channel AlGaN/GaN MODFETswith power density > 3 W/mm at 18 GHz. Electron. Lett. , 1742 - 1744
    2. 2)
      • N.X. Nguyen , B.P. Keller , S. Keller , Y.-F. Wu , M. Le , C. Nguyen , S.P. DenBaars , U.K. Mishra , D. Grider . GaN/AlGaN MODFET with 80 GHz fmax and > 100 V gate-drainbreakdown voltage. Electron. Lett. , 334 - 335
    3. 3)
      • L. Eastman , K. Chu , W. Schaff , M. Murphy , N. Weinmann , T. Eustis . Highfrequency AlGaN/GaN MODFETs. MRS Internet J. Nitride Semicond.Research
    4. 4)
      • S.C. Binari , J.M. Redwing , G. Kelner , W. Kruppa . AlGaN/GaN HEMTs grown on SiC substrates. Electron. Lett. , 242 - 243
    5. 5)
      • Z. Fan , C. Lu , A.E. Botchkarev , H. Tang , A. Salvador , O. Aktas , H. Morkoc . AlGaN/GaN double heterostructure channel modulation doped field effecttransistors (MODFETs). Electron. Lett. , 814 - 815
    6. 6)
      • Y.-F. Wu , B.P. Keller , S. Keller , N.X. Nguyen , M. Le , C. Nguyen , T.J. Jenkins , L.T. Kehias , S.P. Denbaars , U.K. Mishra . Short-channel AlGaN/GaN MODFET's with50-GHz fT and 1.7 W/mm output power at 10 GHz. IEEE Electron Device Lett. , 438 - 440
    7. 7)
      • Wu, Y.-F., Keller, B.P., Keller, S., Nguyen, N.X., Le, M., Nguyen, C., Jenkins, T.J., Kehias, L.T., Denbaars, S.P., Mishra, U.K.: `High speed and high power AlGaN/GaN MODFETs', 55th Annual Device Research Conf., 1997, Ft. Collins, CO.
    8. 8)
      • A.T. Ping , M.A. Khan , Q. Chen , J.W. Yang , I. Adesida . Dependence of DC andRF characteristics on gate length for high current AlGaN/GaN HFETs. Electron.Lett. , 1081 - 1083
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