Oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrates with dynamically stable polarisation

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Oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrates with dynamically stable polarisation

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An experimental investigation of dynamic lasing characteristics in oxide-confinement InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) grown on GaAs(311)A substrates is presented. A stable single polarisation mode was exhibited along the [2̄33] crystallographic direction under continuous wave (CW) operation and under high-speed direct modulation with a data rate of 1 Gbit/s.

Inspec keywords: gallium arsenide; laser modes; optical communication equipment; surface emitting lasers; laser stability; laser cavity resonators; semiconductor lasers; indium compounds; light polarisation; III-V semiconductors

Other keywords: surface-emitting lasers; high-speed direct modulation; oxide-confinement VCSEL; continuous wave operation; CW operation; InGaAs-GaAs; stable single polarisation mode; vertical-cavity SEL; GaAs; 1 Gbit/s; [2̄33] crystallographic direction; dynamic lasing characteristics; dynamically stable polarisation; GaAs(311)A substrates

Subjects: Optical communication; Lasing action in semiconductors; Optical communication devices, equipment and systems; Laser resonators and cavities; Design of specific laser systems; Semiconductor lasers; Laser resonators and cavities

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