A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources.
Inspec keywords: equivalent circuits; semiconductor device noise; high electron mobility transistors; semiconductor device models; matrix algebra; microwave transistors
Other keywords:
Subjects: Algebra; Solid-state microwave circuits and devices; Semiconductor device modelling, equivalent circuits, design and testing; Other field effect devices
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