A linear BiCMOS transconductance amplifier based on a MOS transistor operated in the linear region is presented. The circuit uses regulated cascode techniques to restrict the variation of the drain-source voltage of the MOS device and hence enhance the linearity of the V-I conversion. Simulation results confirm that the proposed circuits have superior linearity compared with other transconductance amplifiers operating in the linear region.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980172
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