High power wide aperture AlGaAs-based lasers at 870 nm

Access Full Text

High power wide aperture AlGaAs-based lasers at 870 nm

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Wide aperture lasers are fabricated which produce record maximum powers of 11.3 and 16.5 W CW at 870 nm from 100 and 200 µm wide apertures, respectively. These powers are approximately two-fold higher than those previously reported in this wavelength regime and are also the highest reported CW powers from wide aperture lasers at any wavelength.

Inspec keywords: gallium arsenide; III-V semiconductors; laser cavity resonators; semiconductor lasers; aluminium compounds

Other keywords: cavity lengths; AlGaAs; 100 micron; III-V semiconductors; semiconductor lasers; CW powers; 16.5 W; 200 micron; maximum powers; 870 nm; 11.3 W; multimode lasers; wide aperture lasers

Subjects: Semiconductor lasers; Laser resonators and cavities; Design of specific laser systems; Laser resonators and cavities; Lasing action in semiconductors

References

    1. 1)
      • O'Brien, S., Zhao, H., Schoenfelder, A., Lang, R.J.: `High power AlGaAs-based 100 µm aperture lasers at 870 and 970 nm', Post deadline paper PDP1.3, LEOS 1996, 18–21 Nov. 1996, Boston, USA.
    2. 2)
      • D.Z. Garbuzov , N.Y. Antonishkis , A.D. Bondarev , A.B. Gulakov , S.Z. Zhigulin , N.I. Katsavets , A.V. Kochergin , E.V. Rafailov . High-power 0.8 µm InGaAsP-GaAs SCHSQW Lasers. IEEE J. Quantum Electron. , 1531 - 1536
    3. 3)
      • J.K. Wade , L.J. Mawst , D. Botez , M. Jansen , F. Fang , R.F. Nabiev . High continuous wave power, 0.8 µm band, Al-free active-regiondiode lasers. Appl. Phys. Lett. , 149 - 151
    4. 4)
      • J. Mawst , A. Bhattacharya , J. Lopez , D. Botez , D.Z. Garbuzov , L. DiMarco , J.C. Connolly , M. Jansen , F. Fang , R.F. Nabiev . 8 Wcontinuous wave front-facet power from broad-waveguide Al-free980 nm diode lasers. Appl. Phys. Lett. , 1532 - 1534
    5. 5)
      • M. Sakamoto , J.G. Endriz , D.R. Scifres . 120 W CW output power from monolithic AlGaAs (800 nm) laser diode arraymounted on diamond heatsink. Electron. Lett. , 197 - 199
    6. 6)
      • D.F. Welch , B. Chan , W. Streifer , D.R. Scifres . High power 8 W CW singlequantum well laser diode array. Electron. Lett. , 113 - 115
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980095
Loading

Related content

content/journals/10.1049/el_19980095
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading