For access to this article, please select a purchase option:
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Your recommendation has been sent to your librarian.
A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantation the material sheet resistance is > 108 Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.
Inspec keywords: annealing; semiconductor doping; ion implantation; gallium compounds; phosphorus; field effect transistors; isolation technology; helium; III-V semiconductors; aluminium compounds
Other keywords:
Subjects: Annealing processes in semiconductor technology; Other field effect devices; Semiconductor doping