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P/He ion implant isolation technology for AlGaN/GaN HFETs

P/He ion implant isolation technology for AlGaN/GaN HFETs

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A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantation the material sheet resistance is > 108 Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals > 700°C. HFETs fabricated with this procedure exhibit good characteristics.

References

    1. 1)
      • M. Asif Kahn , M.S. Shur , J.N. Kuznia , Q. Chen , J. Burm , W. Schaff . Temperature activated conductance in GaN/ALGaN heterostructure field effect transistors operating at temperatures up to 300°C. Appl. Phys. Lett. , 9
    2. 2)
      • M. Asif Kahn , Q. Chen , C.J. Sun , J.W. Yang , M.S. Shur , H. Park . Enhancement and depleation mode GaN/AlGaN heterostructure field effecttransistors. Appl. Phys. Lett. , 4
    3. 3)
      • S.J. Pearton , C.B. Vartuli , J.C. Zolper , C. Yuan , R.A. Stall . Ion implantation doping and isolation of GaN. Appl. Phys. Lett. , 10
    4. 4)
      • S.C. Binari , L.B. Rowland , W. Kruppa , G. Kelner , K. Doverspike , D.K. Gaskill . Microwave performance of GaN MESFETs. Electron. Lett. , 5
    5. 5)
      • S.C. Binari , J.M. Redwing , G. Kelner , W. Kruppa . AlGaN/GaN HEMTsgrown on SiC substrates. Electron. Lett. , 3
    6. 6)
      • M. Asif Khan , Q. Chen , J.W. Yang , M. Shur , B.T. Dermott , J.A. Higgins . Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors. IEEE Electron Device Lett. , 7
    7. 7)
      • J.F. Ziegler , J.P. Biersack , U. Littmark . (1985) The stopping and range of ions in solids.
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