The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.
References
-
-
1)
-
G.J. Hu ,
R.H. Bruce
.
Design tradeoffs between surface and buried-channel FETs.
IEEE Trans. Electron Devices
,
584 -
588
-
2)
-
Wu, S.L., Lee, C.L., Lei, T.F.: `Suppression of boron penetration into an ultrathin gate oxide (< 7nm) by using a stacked-amorphous-silicon film', IEDM Tech. Dig., 1993, p. 329–332.
-
3)
-
T.S. Chao ,
C.H. Chu
.
Inductive-coupling-nitrogen-plasma process for suppression of boron penetrationin BF2+-implanted poly-Si gate.
Appl. Phys. Lett.
,
55 -
56
-
4)
-
H.-H. Tseng ,
P.J. Tohin ,
F.K. Baker ,
J.R. Pfiester ,
K. Evans ,
P.L. Fejes
.
The effects of silicon gate microstructure and gate oxide process onthreshold voltage instability in p+-gate MOSFETs with fluorine incorporation.
IEEE Trans. Electron Devices
,
1687 -
1693
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980061
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