Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source

Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source

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The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.


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