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Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source

Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source

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The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.

References

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      • G.J. Hu , R.H. Bruce . Design tradeoffs between surface and buried-channel FETs. IEEE Trans. Electron Devices , 584 - 588
    2. 2)
      • H.-H. Tseng , P.J. Tohin , F.K. Baker , J.R. Pfiester , K. Evans , P.L. Fejes . The effects of silicon gate microstructure and gate oxide process onthreshold voltage instability in p+-gate MOSFETs with fluorine incorporation. IEEE Trans. Electron Devices , 1687 - 1693
    3. 3)
      • Wu, S.L., Lee, C.L., Lei, T.F.: `Suppression of boron penetration into an ultrathin gate oxide (< 7nm) by using a stacked-amorphous-silicon film', IEDM Tech. Dig., 1993, p. 329–332.
    4. 4)
      • T.S. Chao , C.H. Chu . Inductive-coupling-nitrogen-plasma process for suppression of boron penetrationin BF2+-implanted poly-Si gate. Appl. Phys. Lett. , 55 - 56
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