Thermally evaporated ITO/GaAs Schottky barrier contacts

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Thermally evaporated ITO/GaAs Schottky barrier contacts

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Published

ITO/n-GaAs Schottky barrier contacts have been fabricated by thermal evaporation of In2O3/SnO2 on GaAs with various deposition rates rD. The variation in the contact characteristics was systematically investigated with respect to the deposition rate. The optimal deposition rate of 0.2 Å/s yields a barrier height of 0.80 eV and unity ideality factor with a transmittance value of > 80% in the visible region of the spectrum.

Inspec keywords: contact resistance; gallium arsenide; Schottky barriers; III-V semiconductors; vapour deposition; indium compounds

Other keywords: ITO-GaAs; unity ideality factor; transmittance value; optimal deposition rate; deposition rate; 0.80 eV; thermal evaporation; InSnO-GaAs; deposition rates; barrier height; Schottky barrier contacts; contact characteristics

Subjects: Contact resistance, contact potential, and work functions; Chemical vapour deposition; Semiconductor-metal interfaces; Ion plating and other vapour deposition; Surface double layers, Schottky barriers, and work functions

References

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