ITO/n-GaAs Schottky barrier contacts have been fabricated by thermal evaporation of In2O3/SnO2 on GaAs with various deposition rates rD. The variation in the contact characteristics was systematically investigated with respect to the deposition rate. The optimal deposition rate of 0.2 Å/s yields a barrier height of 0.80 eV and unity ideality factor with a transmittance value of > 80% in the visible region of the spectrum.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19980024
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