Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET

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Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET

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The authors report on the optical responses of a p-channel In0.49Ga0.51P/GaAs/In0.13Ga0.87As pseudomorphic MODFET with a gate length of 1 µm. The photocurrent of the device is –0.36 mA at Vgs = –0.2 V and Vds = –3.5 V, with incident optical power of 2.15 mW. A significantly high responsivity was obtained at low incident optical power range. Current gain cut-off frequency and maximum available gain cut-off frequency were increased by 20 and 10%, respectively, under optical illuminatnon.

Inspec keywords: high electron mobility transistors; III-V semiconductors; gallium arsenide; indium compounds; gallium compounds; phototransistors

Other keywords: InGaP-GaAs-InGaAs; -0.36 mA; optical illumination; incident optical power; current gain cut-off frequency; 1 micron; 2.15 mW; gate length; -3.5 V; responsivity; photocurrent; P-channel double heterojunction pseudomorphic MODFET; 0.2 V; optical responses

Subjects: Photoelectric devices; Other field effect devices

References

    1. 1)
      • A. Singhal , A. Mishra , P. Chakrabarti . Optical effects in modulation-doped-field-effect-transistor. Solid-State Electron. , 9 , 1214 - 1216
    2. 2)
      • Herczfeld, P.R.: `Chip level integration of microwave and photonicdevices', European Microw. Conf. Proc., 1994, p. 3–8.
    3. 3)
      • M. Arafa , P. Fay , K. Ismail , J.O. Chu , B.S. Meyerson , I. Adesida . High speed p-type SiGe modulation-doped field-effect transistors. IEEE Electron Device Lett. , 3 , 124 - 126
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