GaN based LEDs grown by molecular beam epitaxy

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GaN based LEDs grown by molecular beam epitaxy

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GaN based LEDs are grown on sapphire by MBE using NH3. The n- and p-type doping levels are 4×1018 and 3×1017 cm–3, respectively. LEDs turn on at 3 V, and the forward voltage is 3.7 V at 20 mA. The electroluminescence peaks at 390 nm.

Inspec keywords: molecular beam epitaxial growth; semiconductor growth; gallium compounds; light emitting diodes; III-V semiconductors; sapphire

Other keywords: n-type doping level; GaN; p-type doping level; GaN based LEDs; Al2O3; 3.7 V; molecular beam epitaxy; NH3; 390 nm; 20 mA; sapphire; 3 V; electroluminescence peak; MBE growth; forward voltage

Subjects: Light emitting diodes; Epitaxial growth

References

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