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MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate

MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate

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The authors have realised an InGaAs/GaAs vertical cavity surface emitting laser grown on a GaAs (311)B substrate by metal-organic chemical-vapour deposition. A carbon auto-doping technique was used to avoid the difficulty of p-type doping (>1019 cm–3) AlAs for a distributed Bragg reflector. A low electrical resistance of p-type GaAs/AlAs DBRs on GaAs (311)B was obtained by using delta doping and compositional grading layers. The lowest threshold was 16 mA at room temperature CW operation for a 50 µm diameter device. The threshold current density is 810 A/cm2 which is reasonably low for non-optimised experimental conditions. The polarisation state was stable.


    1. 1)
      • Y. Kaneko , S. Nakagawa , T. Takeuchi , D.E. Mars , N. Yamada , N. Mikoshiba . InGaAs/GaAs vertical-cavity surface-emitting lasers on(311)B GaAs substrate. Electron. Lett. , 805 - 806
    2. 2)
      • A. Mizutani , N. Hatori , N. Ohnoki , N. Nishiyama , N. Ohtake , F. Koyama , K. Iga . P-type AlAs growth on GaAs (311)B substrateusing carbon auto-doping for low resistance GaAs/AlAs distributed Braggreflector. To be published in Jpn. J. Appl. Phys.
    3. 3)
      • T. Ohtoshi , T. Kuroda , A. Niwa , S. Tsuji . Dependence of opticalgain on crystal orientation in surface-emitting lasers with strained quantumwells. Appl. Phys. Lett. , 15 , 1886 - 1887
    4. 4)
      • M. Takahashi , P. Vaccaro , K. Fujita , T. Watanabe , T. Mukaihara , F. Koyama , K. Iga . An InGaAs-GaAs vertical-cavitysurface-emitting laser grown on GaAs(311)A substrate having lowthreshold and stable polarisation. IEEE Photonics Technol. Lett. , 6 , 737 - 739
    5. 5)
      • K. Tateno , Y. Ohiso , C. Amano , A. Wakatsuki , T. Kurokawa . Growth of vertical-cavity surface-emitting laser structures on GaAs (311)Bsubstrates by metalorganic chemical vapour deposition. Appl. Phys. Lett. , 25 , 3395 - 3397
    6. 6)
      • Hatori, N., Mizutani, A., Nishiyama, N., Miyamoto, T., Koyama, F., Iga, K.: `A highly conductive GaAs/AlAs distributed Bragg reflector forsurface-emitting lasers by carbon auto doping in MOCVD growth', H8, EW. MOVPE VII Ex. Abst., 1997.

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