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N-type 6H-SiC wafers have been implanted with C and Al, or Al only, at room temperature or 600°C for a comparative study with the emphasis on determining the dependence of the sheet resistivity and specific contact resistance of Al ohmic contacts on the concentration of implanted Al. The optimum implantation concentration is reported for the first time, along with clear evidence showing the advantage of C-Al co-implantation over Al single implantation.
Inspec keywords: electrical resistivity; ohmic contacts; carbon; silicon compounds; contact resistance; ion implantation; aluminium; semiconductor materials
Other keywords:
Subjects: Semiconductor-metal interfaces; Doping and implantation of impurities; Other semiconductor materials; Contact resistance, contact potential, and work functions; Semiconductor doping