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400 mW continuous-wave diffraction limited flared unstable resonator laser diode at 635 nm

400 mW continuous-wave diffraction limited flared unstable resonator laser diode at 635 nm

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400 mw of continuous-wave (CW) diffraction-limited power is demonstrated for the first time from a flared unstable resonator semiconductor laser at a wavelength of 635 nm. More than 75% of the total power is contained in the central lobe of the far field.

Inspec keywords: laser transitions; laser cavity resonators; semiconductor lasers

Other keywords: semiconductor laser; 400 mW; continuous-wave operation; far field central lobe; laser diode; flared unstable resonator LD; CW diffraction limited power; 635 nm

Subjects: Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors; Laser resonators and cavities; Laser resonators and cavities

References

    1. 1)
      • Hiroyama, H., Nishida, T., Uetani, T., Bessho, Y., Shono, M., Sawada, M., Ibaraki, A.: `High-power 630 nm-band AlGaInP laser diodes with strained-compensatedsingle quantum well active layer', CThF1, 1997 Conf. Lasers and Electro-Optics, 22 May 1997, Baltimore, MD.
    2. 2)
      • E.S. Kintzer , J.N. Walpole , S.R. Chinn , C.A. Wang , L.J. Missaggia . High-Power,Strained-layer amplifiers and lasers with tapered gain regions. IEEE Photonics Technol. Lett. , 605 - 608
    3. 3)
      • Osinski, J.S., Lu, B.: `Developments in red lasers for optical data storage', CMH4, 1997 Conf. Lasers and Electro-Optics, 19 May 1997, Baltimore, MD.
    4. 4)
      • S. O'Brien , R. Lang , R. Parke , J. Major , D.F. Welch , D. Mehuys . 2.2-WContinuous-wave diffraction-limited monolithically integrated master oscillator poweramplifier at 854 nm. IEEE Photonics Technol. Lett. , 440 - 442
    5. 5)
      • A.V. Chelnokov , J.-M. Lourtioz , P. Gavrilovic . Numerical modelling of thespatial and spectro-temporal behaviour of wide-aperture unstable resonatorsemiconductor lasers. IEEE Photonics Technol. Lett. , 863 - 865
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