Manufacturable SiGe base HBT realising a 9 GHz-bandwidth preamplifier in 10 Gbit/s optical receiver
Manufacturable SiGe base HBT realising a 9 GHz-bandwidth preamplifier in 10 Gbit/s optical receiver
- Author(s): B.R. Ryum ; T.-H. Han ; D.-H. Cho ; S.-M. Lee
- DOI: 10.1049/el:19970966
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- Author(s): B.R. Ryum 1 ; T.-H. Han 1 ; D.-H. Cho 1 ; S.-M. Lee 1
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View affiliations
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Affiliations:
1: Semiconductor Technology Division, Electronics and Telecommunications Research Institute (ETRI), Taejon, Korea
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Affiliations:
1: Semiconductor Technology Division, Electronics and Telecommunications Research Institute (ETRI), Taejon, Korea
- Source:
Volume 33, Issue 17,
14 August 1997,
p.
1479 – 1480
DOI: 10.1049/el:19970966 , Print ISSN 0013-5194, Online ISSN 1350-911X
Using an arsenic-implanted polysilicon-emitter/reduced pressure (RP) CVD-grown SiGe-base HBT, with an fT of 52 GHz, an fmax of 32 GHz with a BVCEO of 3.5 V, a 9 GHz-bandwidth preamplifier with a transimpedance gain of 45 dBΩ in a 10 Gbit/s optical receiver has been developed.
Inspec keywords: semiconductor materials; MMIC amplifiers; preamplifiers; bipolar MMIC; digital communication; optical receivers; Ge-Si alloys; wideband amplifiers; heterojunction bipolar transistors; bipolar analogue integrated circuits
Other keywords:
Subjects: Microwave integrated circuits; Optical communication; Amplifiers; Bipolar integrated circuits
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