Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

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Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

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An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA

Inspec keywords: amorphous semiconductors; semiconductor growth; elemental semiconductors; semiconductor thin films; carbon; ion beam applications; vacuum deposition; semiconductor doping; wide band gap semiconductors; nitrogen

Other keywords: ion beam assisted filtered cathodic vacuum arc deposition; nitrogen partial pressure; electronic properties; C:N; doping efficiency; nitrogen doped tetrahedral amorphous carbon film

Subjects: Vacuum deposition; Semiconductor doping; Amorphous and glassy semiconductors; Thin film growth, structure, and epitaxy; Structure of amorphous, disordered and polymeric materials; Chemical vapour deposition; Doping and implantation of impurities; Elemental semiconductors

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