An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA
References
-
-
1)
-
Shi Xu ,
B.K. Tay ,
H.S. Tan ,
Li Zhong ,
Y.Q. Tu ,
S.R.P. Silva ,
W.I. Milne
.
Properties of carbon ion deposited tetrahedral amorphous carbon filmsas a function ofion energy.
J. Appl. Phys
,
9 ,
7239 -
7245
-
2)
-
Shi Xu ,
L.K. Cheah ,
B.K. Tay ,
Fu Hui
.
Spectroscopic ellipsometry studies oftetrahedral amorphous carbon prepared by filtered cathodic vacuum arc technique.
Thin Solid Film
-
3)
-
Veerasamy, V.S.,: `Tetrahedral amorphous carbon deposition, characterisation andelectronic properties', 1994, Ph.D, University of Cambridge, Engineering Dept..
-
4)
-
J. Robertson ,
C.A. Davis
.
Nitrogen doping of tetrahedral amorphous carbon.
Diam. Relat. Mater.
,
441 -
444
-
5)
-
T.R. Frauenheim ,
U. Stephan ,
P. Blaudeck ,
G. Jungnickel
.
Moleculardynamic investigation of amorphous carbon: π bonding vs. Electronic defect generation.
Diam. Relat. Mater.
,
462 -
469
-
6)
-
Silva, S.R.P., Amaratunga, G.A.J.: `Doping of rf plasma deposited diamond likecarbon films', ICMCTF '95, 1995, San Diego.
-
7)
-
J. Tauc ,
A. Menth
.
State in the gap.
J. Non-Cryst. Solids
,
569 -
585
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