Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA


    1. 1)
      • Veerasamy, V.S.,: `Tetrahedral amorphous carbon deposition, characterisation andelectronic properties', 1994, Ph.D, University of Cambridge, Engineering Dept..
    2. 2)
      • Shi Xu , B.K. Tay , H.S. Tan , Li Zhong , Y.Q. Tu , S.R.P. Silva , W.I. Milne . Properties of carbon ion deposited tetrahedral amorphous carbon filmsas a function ofion energy. J. Appl. Phys , 9 , 7239 - 7245
    3. 3)
      • J. Tauc , A. Menth . State in the gap. J. Non-Cryst. Solids , 569 - 585
    4. 4)
      • Shi Xu , L.K. Cheah , B.K. Tay , Fu Hui . Spectroscopic ellipsometry studies oftetrahedral amorphous carbon prepared by filtered cathodic vacuum arc technique. Thin Solid Film
    5. 5)
      • T.R. Frauenheim , U. Stephan , P. Blaudeck , G. Jungnickel . Moleculardynamic investigation of amorphous carbon: π bonding vs. Electronic defect generation. Diam. Relat. Mater. , 462 - 469
    6. 6)
      • J. Robertson , C.A. Davis . Nitrogen doping of tetrahedral amorphous carbon. Diam. Relat. Mater. , 441 - 444
    7. 7)
      • Silva, S.R.P., Amaratunga, G.A.J.: `Doping of rf plasma deposited diamond likecarbon films', ICMCTF '95, 1995, San Diego.

Related content

This is a required field
Please enter a valid email address