Molecular beam deposition of n-type polycrystalline In0.6Ga0.4As for high resistances in heterojunction bipolar transistor integrated circuits
100 nm thick n-type polycrystalline In0.6Ga0.4As layers have been grown on SiO2 by molecular beam epitaxy and their electrical properties have been investigated using Au/Pt/Ti as non-alloyed ohmic metals. A moderate sheet resistance of 4.7 × 102 Ω/□ was obtained, together with a low specific contact resistance of 8 × 10–8 Ωcm2. This material should be useful for attaining high resistances in heterojunction bipolar transistor integrated circuits.
