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Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping

Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping

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SiO2 has been successfully used as the dielectric capping material for bandgap tuning in InGaAs/InP MQW for the first time where the InGaAs cap layer is used simultaneously. The samples showed large blue shifts of bandgap energy after RTA treatment (185 and 230 meV at 750 and 850°C, respectively). Samples with SiO2-InP or SiNx-InGaAs cap layer combinations did not show significant energy shifts.

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