Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures

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Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures

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Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host.

Inspec keywords: solid phase epitaxial growth; erbium; silicon; photoluminescence; semiconductor quantum wells; semiconductor growth; Ge-Si alloys; ion implantation; recrystallisation; elemental semiconductors; amorphisation; semiconductor materials

Other keywords: Si/Si1-xGex/Si:Er; 77 K; Si-SiGe-Si:Er; recrystallisation; ion implantation; amorphisation; solid phase epitaxial regrowth; luminescence; quantum well structures; 550 C

Subjects: Luminescent materials; Epitaxial growth; Low-dimensional structures: growth, structure and nonelectronic properties; Optical properties of nonmetallic thin films; Semiconductor superlattices, quantum wells and related structures; Doping and implantation of impurities; Photoluminescence in tetrahedrally bonded nonmetals; Semiconductor doping; Thin film growth from solid phases

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