http://iet.metastore.ingenta.com
1887

Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures

Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host.

References

    1. 1)
      • H. Ennen , J. Schneider , G. Pomrenke , A. Axmann . 1.54 µmluminescence of erbium implanted III-V semiconductors and silicon. Appl. Phys. Lett. , 943 - 945
    2. 2)
      • B. Zheng , J. Michel , F.Y.G. Ren , L.C. Kimerling , D.C. Jacobson , J.M. Poate . Room-temperature sharp line electroluminescence atλ = 1.54 µm from an erbium-doped, silicon light-emitting diode. Appl. Phys. Lett. , 2842 - 2844
    3. 3)
      • Hartung, J., Evans, J.H., Dawson, P., Scholes, A., Taskin, T., Huda, M.Q., Jeynes, C., Peaker, A.R.: `Luminescence decay of the1.54 µm emission from erbium in silicon', Mater. Res. Soc. Symp. Proc., 1996, 422, p. 119–124.
    4. 4)
      • H. Efeoglu , J.H. Evans , T.E. Jackman , B. Hamilton , D.C. Houghton , J.M. Langers , A.R. Peaker , D. Perovic , I. Poole , N. Ravel , P. Hemment , C.W. Chan . Recombinationprocess in erbium-doped MBE silicon. Semicond. Sci. Technol. , 236 - 242
    5. 5)
      • Chang, S.J., Nayak, D.K., Shiraki, Y.: `Photoluminescence oferbium implanted in SiGe', Mater. Res. Soc. Symp. Proc., 1996, 422, p. 131–136.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19970750
Loading

Related content

content/journals/10.1049/el_19970750
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address