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Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures

Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures

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Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host.


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