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Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off

Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off

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The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n+-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.

Inspec keywords: germanium; indium compounds; ohmic contacts; semiconductor technology; optical fabrication; gallium arsenide; semiconductor-metal boundaries; palladium; semiconductor lasers; III-V semiconductors

Other keywords: ELO technology; GaAs-InGaAs; back-side contact; GaAs-InGaAs laser diode; Pd/Ge/Pd coated n--Si substrate; epitaxial liftoff; vertical conduction; ohmic contacts; stripe-geometry LD film; Si; Si-Pd-Ge-Pd-GaAs

Subjects: Optical fabrication, surface grinding; Design of specific laser systems; Semiconductor lasers; Semiconductor-metal interfaces; Lasing action in semiconductors; Electrical properties of metal-nonmetal contacts

References

    1. 1)
      • J.P. Van Der Ziel , R.D. Dupuis , R.A. Logan , C.J. Pinzone . Degradation of GaAs lasers grown by metalorganic chemical vapor depositionon Si substrates. Appl. Phys. Lett. , 89 - 91
    2. 2)
      • M. Razeghi , M. Defour , R. Blondeau , F. Omnes , Ph. Maurel , O. Acher , F. Brillouet . First cw operation of aGa0.25In0.75As0.5P0.5-InP laser on a silicon substrate. Appl. Phys. Lett. , 2389 - 2390
    3. 3)
      • I. Pollentier , L. Buydens , P. Van Daele , P. Demeester . Fabrication of a GaAs-AlGaAs GRIN-SCH SQW laser diode on silicon byepitaxial lift-off. IEEE Photonics. Technol. Lett. , 115 - 117
    4. 4)
      • M. Razeghi , M. Defour , F. Omnes , Ph. Maurel , J. Chazelas , F. Brillouet . First GaInAsP-InP double-heterostructure laseremitting at 1.27 µm on a silicon substrate. Appl. Phys. Lett. , 725 - 727
    5. 5)
      • H.Y. Lo , R. Bhat , M.D. Hwang , C. Chua , H.C. Lin . Semiconductor lasers on Si substrates using the technology of bondingby atomic rearrangement. Appl. Phys. Lett. , 1038 - 1040
    6. 6)
      • I. Hayashi . Optoelectronic devices and material technologies forphotoelectronic integrated systems. Jpn. J. Appl. Phys. , 266 - 271
    7. 7)
      • M. Sugo , H. Mori , M. Tachikawa , Y. Itoh . Room-temperatureoperation of an InGaAsP double-heterostructure laser emitting at1.55 µm on a Si substrate. Appl. Phys. Lett. , 593 - 595
    8. 8)
      • M. Koyanag , H. Takata , H. Mori , J. Iba . Design of 4-bit × 4 layeroptically coupled three-dimensional common memory for parallelprocessor system. IEEE Solid-State Circuits , 109 - 116
    9. 9)
      • H. Wada , T. Kamijoh . Room-temperature cw operation of anInGaAsP lasers on a Si fabricated by wafer bonding. IEEE Photonics. Technol.Lett. , 173 - 175
    10. 10)
      • E. Yablanovitch , E. Kapon , T.J. Gmitter , C.P. Yun , R. Rhat . Double heterostructure GaAs/AlGaAs thin film diode lasers on glasssubstrates. IEEE Photonics. Technol. Lett. , 41 - 42
    11. 11)
      • J.C. Fan , C.P. Lee , K.Y. Chen , Lin . Epitaxially lifted-offn-GaAs film onto Pd/Ge/Pd coated Si substrate leading to verticalconduction across ELO film and Si substrate. J. Appl. Phys.
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